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| TGS4305-FC 60-90 GHz SP3T Switch Flip Chip Key Features * * * * * * * Frequency Range: 60-90 GHz 2.3 dB Typical Flipped Insertion Loss 20 dB Nominal Isolation > 13 dB Typical Thru State Return Loss < 5 nsec Switching Speed Integrated DC blocking at RF ports Chip dimensions: 1.69 x 1.37 x 0.38 mm (0.067 x 0.054 x 0.015 in) Measured Performance Bias conditions OFF: Vd = 1.35 V, Id = ~10 mA, State 4 ON: Vd = -5V, Id = 0 mA, State 2 RF IN to RF OUT 2 0 Primary Applications * * Automotive Transceivers E-Band Transceivers -10 Product Description The TriQuint TGS4305-FC is a 60-90 GHz SP3T Switch. This part is designed using TriQuint's proven standard VPIN production process. The switching speed for TGS4305FC is < 5 nsec typically. The TGS4305-FC, when flipped, provides a nominal 2.3 dB insertion loss, > 13 dB Thru State return loss, and 20 dB isolation in the automotive band. The TGS4305-FC integrates DC blocking capacitors on all output ports to reduce the number of off-chip components. S11 S22 S21 (dB) -20 -30 ON OFF -40 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) 0 -5 -10 -15 -20 -25 60 63 66 69 72 75 78 81 84 87 90 State 2 Return Loss (dB) The TGS4305-FC has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant 1 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in Table I Absolute Maximum Ratings 1/ SYMBOL Vd1,2,3 Id1,2,3 Pin Tstg 1/ TGS4305-FC PARAMETER Maximum Supply Voltage Maximum Supply Current Maximum Input Power Storage Temperature VALUES -15 V to 2 V 15 mA 27 dBm -65 to 150 0C NOTES These ratings represent the maximum operating values for this device. Table II Recommended Operating Conditions Truth Table State RF IN to RF OUT 1 RF IN to RF OUT 2 RF IN To RF OUT 3 Vd1 Vd2 1.35 V @ 10 mA Vd3 1.35 V @ 10 mA 1 ON OFF OFF -5 V @ 0 mA 2 OFF ON OFF 1.35 V @ 10 mA -5 V @ 0 mA 1.35 V @ 10 mA 3 OFF OFF ON 1.35 V @ 10 mA 1.35 V @ 10 mA -5 V @ 0 mA 4 OFF OFF OFF 1.35 V @ 10 mA 1.35 V @ 10 mA 1.35 V @ 10 mA 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in TGS4305-FC Table III RF Characterization Table (TA = 25 Nominal) C, Probe Tip Calibration Id = 6 mA, typical THROUGH PATH IDENTIFICATION RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 PARAMETER Insertion Loss (State 2) TEST CONDITIONS F = 76 - 77 GHz MINIMUM NOMINAL 1.6 MAXIMUM 3.75 UNITS dB Isolation On/off ratio (State 2 / 4 ) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 F = 76 - 77 GHz 16 20 dB Input Return Loss (State 2) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 F = 76 - 77 GHz 8 10 dB Output Return Loss (State 2) RF Input to RF Output 1 RF Input to RF Output 2 RF Input to RF Output 3 F = 76 - 77 GHz 8 10 dB 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in Measured Data Insertion Loss RF IN to RF OUT 2 0 TGS4305-FC -1 State 2 S21 (dB) -2 -3 -4 -5 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) RF IN to RF OUT 2 0 State 4 -10 S21 (dB) -20 -30 -40 60 63 66 69 72 75 78 81 84 87 90 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B Frequency (GHz) www.DataSheet.in Measured Data Return Loss RF IN to RF OUT 2 0 TGS4305-FC -5 State 2 ON State IRL, ORL (dB) -10 -15 -20 S11 S22 -25 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) RF IN to RF OUT 2 0 -5 IRL, ORL (dB) State 4 OFF State -10 -15 S11 -20 S22 -25 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in Measured Data Insertion Loss RF IN to RF OUT 3 0 TGS4305-FC -1 State 3 S21 (dB) -2 -3 -4 -5 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) RF IN to RF OUT 3 0 State 4 -10 S21 (dB) -20 -30 -40 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in Measured Data Return Loss RF IN to RF OUT 3 0 TGS4305-FC ON State State 3 -5 IRL, ORL (dB) -10 -15 -20 S11 S22 -25 60 63 66 69 72 75 78 81 84 87 90 Frequency (GHz) RF IN to RF OUT 3 0 -5 IRL, ORL (dB) State 4 OFF State -10 -15 -20 S11 S22 -25 60 63 66 69 72 75 78 81 84 87 90 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B Frequency (GHz) www.DataSheet.in TGS4305-FC Electrical Schematic 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in TGS4305-FC Mechanical Drawing Drawing is for chip face up Units: millimeters (inches) Thickness: 0.380 (0.015). Die x,y size tolerance: +/- 0.050 (0.002) Chip edge to pillar dimensions are shown to center of pillar Pillar # 1 Pillar # 5 Pillar # 10 Pillar # 15 Pillar # 7 Pillar # 12 Pillar # 13 Pillar # 8 Pillar # 2, 4, 6, 9, 11, 14, 16, 17 Pillar # 3 RF IN RF OUT 1 RF OUT 2 RF OUT 3 Vd1 Vd2 Vd3 DC Ground RF CPW Ground Mechanical Support Only 0.075 0.075 0.075 0.075 0.075 0.075 0.075 0.075 0.075 0.075 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in TGS4305-FC Recommended Assembly Diagram TGS4305-FC SP3T data represented in this datasheet was taken using co-planar waveguide (CPW) transition on the shown substrate and ground-signal-ground probes. Bypass capacitors not required. Alumina substrate board Thickness: 0.015 in. r = 9.9 RF OUT 1 Vd 1 Vd 2 RF IN RF OUT 2 DC Ground TGS4305-FC SP3T Die Vd 3 RF OUT 3 Die is flip-chip soldered to substrate GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in TGS4305-FC Assembly Notes Component placement and die attach assembly notes: * Vacuum pencils and/or vacuum collets are the preferred method of pick up. * Air bridges must be avoided during placement. * Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap. * Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au / Sn mass ratio must not exceed 8%. * Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from undercutting the barrier. Reflow process assembly notes: * Minimum alloying temperatures 245 C. * Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle. * An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used. * Dip copper pillars in "no-clean flip chip" flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire die to flux. * If screen printing flux, use small apertures and minimize volume of flux applied. * Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability. * Devices must be stored in a dry nitrogen atmosphere. * Suggested reflow will depend on board material and density. See Triquint Application Note for flip-chip soldering process: TBD Typical Reflow Profiles for TriQuint Cu / Sn Pillars Process Ramp-up Rate Flux Activation Time and Temperature Time above Melting Point (245 C) Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate Sn Reflow 3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 300 C 10 - 20 sec 4 - 6 C/sec Ordering Information Part TGA4305-FC Package Style GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com November 2009 (c) Rev B www.DataSheet.in |
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